This course discusses topics: important parameters governing the high-speed performance of devices and circuits; silicon-based MOSFET and BJT circuits for high-speed operation and their limitations; materials for high-speed devices and circuits; metal-semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal Semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high-speed Circuits; and high-frequency resonant-tunneling devices.