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Mod-14 Lec-01 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects
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Mod-12 Lec-06 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-12 Lec-05 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-12 Lec-02 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-12 Lec-04 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-13 Lec-02 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction
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Mod-13 Lec-01 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction
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Mod-12 Lec-01 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-11 Lec-01 DC Model of a Large MOSFET: Eqns, Boundary Condns, Approximations
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Mod-12 Lec-03 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
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Mod-14 Lec-02 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects
Description:
Course Learning Outcomes: At the end of this course, you should be able to 1. Explain the equations, approximations and techniques available for deriving a model with specified properties, for a general device characteristic with known qualitative theory 2. Apply suitable approximations and techniques to derive the model referred to above starting from drift-diffusion transport equations (assuming these equations hold) 3. Offer clues to a qualitative understanding of the physics of a new device and conversion of this understanding into equations 4. Simulate characteristics of a simple device using MATLAB, SPICE and ATLAS /SYNOPSYS 5. Explain how the equations get lengthy and parameters increase in number while developing a compact model 6. List mathematical functions representing various non-linear shapes

Semiconductor Device Modeling

NPTEL
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