Mod-14 Lec-01 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects
2
Mod-12 Lec-06 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
3
Mod-12 Lec-05 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
4
Mod-12 Lec-02 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
5
Mod-12 Lec-04 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
6
Mod-13 Lec-02 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction
7
Mod-13 Lec-01 DC Model of a Large MOSFET: Testing, Improvement and Parameter Extraction
8
Mod-12 Lec-01 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
9
Mod-11 Lec-01 DC Model of a Large MOSFET: Eqns, Boundary Condns, Approximations
10
Mod-12 Lec-03 DC Model of a Large MOSFET: Surface Potential and VT Based Solutions of IDS
11
Mod-14 Lec-02 DC Model of a Bulk MOSFET: Series R, non-uniform doping and small size effects
Description:
Course Learning Outcomes: At the end of this course, you should be able to
1. Explain the equations, approximations and techniques available for deriving a model with specified properties, for a general device characteristic with known qualitative theory
2. Apply suitable approximations and techniques to derive the model referred to above starting from drift-diffusion transport equations (assuming these equations hold)
3. Offer clues to a qualitative understanding of the physics of a new device and conversion of this understanding into equations
4. Simulate characteristics of a simple device using MATLAB, SPICE and ATLAS /SYNOPSYS
5. Explain how the equations get lengthy and parameters increase in number while developing a compact model
6. List mathematical functions representing various non-linear shapes