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Lecture 1 - Introduction to Basic Concepts

Lecture 2-Requirements of High Speed Devices, Circuits & Mat

Lecture-3-Classifications & Properties of Compound Semicond

Lecture4-Temary Compound Semiconductor and their Application

Lecture5-Temary Compound Semiconductor and their Appl - 2

Lecture 6 - Crystal Structures in GaAs

Lecture 7 - Dopants and impurities in GaAs and InP

Lecture 8- Brief Overview of GaAs Technology for High Speed

Lecture 9 - Epitaxial Techniques for GaAs High Speed Devices

Lecture 10 - MBE and LPE for GaAs Epitaxy

Lecture 11 - GaAs and InP Devices for Microelectronics

Lecture 12 - Metal Semiconductor contacts for MESFET

Lecture13- Metal Semiconductor contacts for MESFET (Contd.)

Lecture14- Metal Semiconductor contacts for MESFET (Contd.)

Lecture 15 - Ohmic Contacts on Semiconductors

Lecture 16 - Fermi Level Pinning & Schottky Barrier Diodes

Lecture 17 - Schottky Barrier Diode

Lecture 18 - Schottky Barrier Diodes

Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes

Lecture 20 - MESFET Operation & I-V Characteristics

Lecture 21 - MESFET I-V Characteristics Shockley's Model

Lecture 22 - MESFET Shockley's Model and Velocity saturation

Lecture 23- MESFET Velocity Saturation effect

Lecture 24 -MESFET Drain Current Saturation

Lecture 25 - MESFET : Effects of channel length and gate length on IDS and gm

Lecture 26 - MESFET: Effects of Velocity Saturation

Lecture 27 - Velocity Field Characteristics

Lecture-28-MESFET-SAINT

Lecture-29-SELF Aligned MESFET-SAINT

Lecture-30-Hetero Junctions

Lecture-31-Hetero Junctions&HEMT

Lecture-32-Hetero Junctions&HEMT(Contd)

Lecture-33-High Electron Mobility Transistor

Lecture-34-HEMT-off Voltage

Lecture-35-HEMT 1-V Characteristics and Transconductance

Lecture-36-Indium Phosphide Based HEMT

Lecture-37-Pseudomorphic HEMT

Lecture-38-Hetrojunction Bipolar Transistors(HBT)

Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd)

Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd)

Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd)

Description:

This course discusses topics: important parameters governing the high-speed performance of devices and circuits; silicon-based MOSFET and BJT circuits for high-speed operation and their limitations; materials for high-speed devices and circuits; metal-semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal Semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high-speed Circuits; and high-frequency resonant-tunneling devices.

High Speed Devices and Circuit

NPTEL

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#Engineering #Electrical Engineering #Circuits #Science #Materials Science #Crystal Structures

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