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35TH DISTINGUISHED LECTURE
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Semiconductors: a timeless problem for electron
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Semiconductors: a timeless problem for energy
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Semiconductors: a timely problem
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Quantum processes in semiconductor devices
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Workflow for phonon-mediated quantum process
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Overview
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Need for phonon-assisted optics
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Quantum theory of optical absorption
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Challenge: interpolation over Brillouin zone
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Phonon-assisted optical absorption in silicon
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Other semiconductors: BAs
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Doped semiconductors: silicon
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Absorption in transparent conducting oxides
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Introduction to Auger-Meitner recombination
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On the naming of Auger-Meitner recombinati
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Auger-Meitner recombination in silicon
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Problems with nitride LEDs
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Ultra-wide-band-gap semiconductors
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Example: deep vs. shallow defects
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Challenges with diamond, cBN: dopants, mob
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Challenges with AlGaN: alloy-disorder scatteri
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Alloy disorder limits the mobility of AlGaN
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Band structure of rutile GeO₂
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Defect calculation method
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Baliga Figure of Merit
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First epitaxial thin films
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Summary and Acknowledgements
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Co-doping acceptors with Hydrogen
Description:
Explore the frontiers of semiconductor technology through predictive atomistic calculations in this Distinguished Lecture by Prof. Emmanouil Kioupakis from the University of Michigan. Delve into the fundamental limitations and discover new materials in semiconductor research. Examine quantum processes in semiconductor devices, focusing on phonon-mediated processes and their impact on optical absorption. Investigate challenges in nitride LEDs, ultra-wide-band-gap semiconductors, and the limitations of alloy disorder in AlGaN mobility. Learn about defect calculation methods, the Baliga Figure of Merit, and recent advancements in epitaxial thin films. Gain insights into co-doping acceptors with hydrogen and understand the timeless and timely problems in semiconductor technology for electrons and energy applications.

Advancing the State of the Art in Semiconductor Technology Through Predictive Atomistic Calculations - Lecture 35

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