Explore the history and future developments of blue, green, and white LEDs and laser diodes in this 33-minute talk by 2014 Nobel Prize winner Shuji Nakamura at the APS March Meeting 2015 Kavli Foundation Special Symposium. Delve into the fundamentals of LED technology, applications for InGaN-based LEDs, and their impact on energy savings. Trace the research journey from 1989, including the invention of Two Flow MOCVD and the development of GaN buffer layers. Understand the significance of thermal annealing and passivation of p-type GaN, as well as the crucial role of InGaN in LED efficiency. Examine the historical progression of LED efficiency and the contributions that led to high-brightness InGaN LEDs. Gain insights into GaN/InGaN on Sapphire research and UCSB's vision for the future of LED technology.